 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CEM11C2 Jul. 2002 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) 5 FEATURES 30V ,7A , RDS(ON)=30m @VGS=10V. RDS(ON)=42m @VGS=4.5V. -20V , -4.3A , RDS(ON)=90m @VGS=-4.5V. RDS(ON)=120m @VGS=-2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. SO-8 1 1 2 3 4 D1 8 D1 7 D2 6 D2 5 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=125 C b -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation a Operating Junction and Storage Temperature Range a a Symbol VDS VGS ID IDM IS PD TJ, TSTG N-Channel P-Channel 30 20 7 30 2.3 2.0 -55 to 150 -20 8 4.3 17 -4.3 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 62.5 C/W 5-148 CEM11C2 N-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Symbol Condition VGS = 0V,ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 7A VGS = 4.5V, ID = 3.5A VDS = 5V, VGS = 10V VDS = 15V, ID =7A Min Typ C Max Unit 5 30 1 100 1 24 32 30 8 804 328 79 3 30 42 V A nA V m m A S ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c PF PF PF VDS =15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 25V, ID = 1A, VGS = 10V, RGEN = 6 16 7 47 10 20 24 14 60 15 24 ns ns ns ns nC nC nC VDS =15V, ID = 2A, VGS =10V 5-149 3 6 CEM11C2 P-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Condition VGS = 0V, ID = -250A VDS = -16V, VGS= 0V VGS = 8V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V,ID = -2.2A VGS = -2.5V,ID = -1.8A VDS = -5V, VGS = -4.5V VDS = -16V,ID = -2.2A Min Typ C Max Unit -20 -1 V A 100 nA -0.6 50 80 -20 4 6 1430 800 325 -1.5 90 120 V m m A S OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c PF PF PF VDS =-15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = -2.2A, VGEN = - 4.5V, RGEN = 6 20 21 76 56 19.4 28 30 106 78 25 ns ns ns ns nC nC nC VDS =-6V, ID = -2.2A, VGS =-4.5V 5-150 3 5 CEM11C2 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is = 2A N-Ch VGS = 0V, Is =-1.8A P-Ch Min Typ Max Unit 5 0.76 1.1 -0.80 -1.0 C DRAIN-SOURCE DIODE CHARACTERISTICS b V Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. N-Channel 25 VGS=10,8,7,6,5V 20 VGS=4V 24 30 ID, Drain Current (A) 15 ID, Drain Current (A) 18 10 VGS=3V 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 12 Tj=125 C 6 25 C 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -55 C VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics RDS (ON), On-Resistance (Ohms) 1800 1500 0.06 Figure 2. Transfer Characteristics VGS=10V 0.05 Tj=125 C 0.04 25 C 0.03 C, Capacitance (pF) 1200 900 600 Coss 300 Crss 0 0 5 10 15 20 25 30 Ciss -55 C 0.02 0.01 0 0 5 10 15 20 VDS, Drain-to Source Voltage (V) ID, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 5-151 CEM11C2 N-Channel BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 5 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=-250 A 5 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 15 Figure 6. Breakdown Voltage Variation with Temperature 30.0 gFS, Transconductance (S) VDS=15V 12 9 6 3 0 0 5 10 15 20 -Is, Source-drain current (A) 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current Figure 8. Body Diode Forward Voltage Variation with Source Current 5-152 CEM11C2 P-Channel 25 -VGS=5,4.5,4,3.5V 20 -55 C 25 C Tj=125 C 12 5 -ID, Drain Current (A) -ID, Drain Current (A) 20 3V 15 16 10 2V 8 5 0 0 2 4 6 8 4 0 10 12 0 0.5 1 1.5 2 2.5 3 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), On-Resistance (Ohms) 2400 2000 Ciss 1600 1200 800 400 0 0 4 8 12 16 20 24 Coss Crss 0.12 VGS=10V 0.10 0.08 0.06 0.04 -55 C 0.02 0.00 0 5 10 15 20 Tj=125 C C, Capacitance (pF) 25 C -VDS, Drain-to-Source Voltage (V) -ID, Drain Current (A) Figure 3. Capacitance Figure 4. On-Resistance Variation withDrain Current and Temperature 5-153 CEM11C2 P-Channel 5 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=-250 A 1.15 ID=-250 A 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 15 Figure 6. Breakdown Voltage Variation with Temperature 30.0 VGS=0V gFS, Transconductance (S) 12 9 -Is, Source-drain current (A) 10.0 6 3 VDS=-16V 0 0 4 8 12 16 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -IDS, Drain-Source Current (A) -VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current Figure 8. Body Diode Forward Voltage Variation with Source Current 5-154 CEM11C2 N-Channel VGS, Gate to Source Voltage (V) 5 10 8 6 4 2 0 0 3 6 9 12 15 18 21 24 Qg, Total Gate Charge (nC) 50 ID, Drain Current (A) VDS=15V ID=2A 10 RD S (O L N) im it 10m 100 1s DC 5 s ms 1 0.1 0.03 0.1 VGS=10V Single Pulse TA=25 C 1 10 30 50 VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area P-Channel VGS, Gate to Source Voltage (V) 5 -ID, Drain Current (A) 50 4 3 2 1 0 0 VDS=-6V ID=-2.2A 10 R DS ( ) ON Lim it 10 10 0m ms 1s s 1 DC 0.1 0.03 VGS=-4.5V Single Pulse TA=25 C 0.1 1 10 20 50 3 6 9 12 15 18 21 24 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area 50 5-155 CEM11C2 VDD t on toff tr 90% 5 VGS RGEN V IN D G RL VOUT td(on) VOUT td(off) 90% 10% tf 5 10% INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = PDM* R JA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -1 1 10 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5-156 |
Price & Availability of CEM11C2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |